MRF7S16150HR3 MRF7S16150HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?10
1 10010
?40
?50
?30
?20
?60
7th Order
5th Order
3rd Order
400
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
1 10010
?60
0
IM3?U
?20
?30
?50
IMD, INTERMODULATION DISTORTION (dBc)
?40
IM3?L
IM5?U
IM5?L
IM7?L
IM7?U
?75
?15
?50
?55
?60
?70
?45
?65
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
Pout, OUTPUT POWER (WATTS) CW
60
35
30
10
1 10010 300
20
15
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ACPR (dBc)
ηD
40
25
Gps
VDD= 28 Vdc, IDQ
= 1500 mA
f = 1630 MHz, 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
VDD
= 28 Vdc, I
DQ
= 1500 mA
f1 = 1625
MHz, f2 = 1635 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
VDD
= 28 Vdc, P
out
= 180 W (PEP), I
DQ
= 1500
mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1630 MHz
400
14
21
0
C
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1500 mA
f = 1630 MHz
TC
= ?30
C
25C
?30
85C
10
1
19
18
17
16
15
50
40
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
200
15
21
0 100
16
17
18
IDQ
= 1500 mA
f = 1630 MHz
300
VDD
= 24 V
28 V
?10
45
50
55
?40
?35
?30
C
?25
?20
20
C
60
25
85C
19
20
32 V
5
TC
= ?30
C
25
?30C
85C
?30C
85C
25C
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